| PART |
Description |
Maker |
| PCHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| 7MBP200VEA060-50 |
IGBT MODULE (V series) 600V / 200A / IPM
|
Fuji Electric
|
| MSK4851H MSK4851 MSK4851E |
600V/200A THREE PHASE BRIDGE PEM WITH BRAKE
|
MSK[M.S. Kennedy Corporation]
|
| MIMMF200S060B MIMMF200S060B2B |
600V 200A FRED Module RoHS Compliant
|
Micross Components
|
| MIMMF200S060DK |
600V 200A FRED Module RoHS Compliant
|
Micross Components
|
| FMG1G200US60L |
600V, 200A IGBT Module (Molding Type)
|
Fairchild Semiconductor
|
| PP200B060 |
POW-R-PAK 200A / 600V H-Bridge IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7
600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| 2MBI200-120-01 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
1200V / 200A 2 in one-package 1200 200安培在一2级封
IGBT module
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| STI13005 STI13006 STI13002 STI13008 |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2A I(C) | TO-220
DIODE,SIDACTOR,275V,200A,2P,DO214AA,SMT,
晶体管|晶体管|叩| 600V的五（巴西）总裁| 1A条一c）|20
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 8A I(C) | TO-220 晶体管|晶体管|叩| 600V的五（巴西）总裁| 8A条一（c）|20
|
STMicroelectronics N.V.
|
| 203CNQ100R 203CNQ080 203CNQ080R 203CNQ100 203CNQ10 |
SCHOTTKY RECTIFIER
100V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
100V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
SCHOTTKYRECTIFIER
SCHOTTKY RECTIFIER 肖特基整流器
100 A, 100 V, SILICON, RECTIFIER DIODE, TO-244AB
|
IRF[International Rectifier]
InternationalRectifier
International Rectifier, Corp.
|
